dm t3020lfdb document number: ds 38407 rev. 2 - 2 1 of 7 www.diodes.com may 2016 ? diodes incorporated dm t3020 l fdb dual n - channel enhancement mode mosfet product summary v (br)dss r ds(on) m ax i d m ax t a = + 25c 30v 20 m? @ v gs = 10v 7. 7 a 32 m? @ v gs = 4.5v 6. 1 a description this new generation mosfet is designed to minimize the on - state resistance (r ds(on) ) , yet maintain superior switching performance, making it ideal for high - efficiency power management applications. applications ? general purpose interfacing switch ? power management functions featur es and benefits ? 0.6mm p rofile C i deal for l ow p rofile a pplications ? low gate threshold voltage ? low on - resistance ? totally lead - free & fully rohs c ompliant (note s 1 & 2 ) ? halogen and antimony free. green device (note 3 ) ? qualified to aec - q101 standards for high re liability mechanical data ? case: u - dfn2020 - 6 (type b) ? case material: molded plastic, green molding compound. ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminals: finish nipdau a nnealed over copper l eadframe. solderable per mil - std - 202, method 208 ? terminals connections: see diagram below ? weight: 0.0065 grams ( a pproximate) ordering information (note 4 ) part number case packaging dm t 3 020 lfdb - 7 u - dfn2020 - 6 (type b) 3 , 000/tape & reel dm t 3 020 lfdb - 13 u - dfn2020 - 6 (type b) 10 , 000/tape & reel note s: 1 . no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free " green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4 . for packaging details, go to our website at http://www.diodes.com /products/packages.html . marking information date code key year 2015 2016 201 7 201 8 201 9 20 20 20 21 code c d e f g h i month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d bottom view internal schematic y2 = product type marking code ym = date code marking y = year (ex: c = 20 15 ) m = month (ex: 9 = september) s 1 g 1 d1 d2 s2 g2 d1 d2 pin1 u - dfn2020 - 6 (type b) y2 n5 y m d 1 s 1 g 1 d 2 s 2 g 2 e4
dm t3020lfdb document number: ds 38407 rev. 2 - 2 2 of 7 www.diodes.com may 2016 ? diodes incorporated dm t3020 l fdb maximum ratings (@t a = +25c, unless otherwise specified.) characteristic symbol value unit drain - source voltage v dss 30 v gate - source voltage v gss 20 v continuous drain current (note 6 ) v gs = 10 v steady state t a = + 25 c t a = + 75 c i d 7. 7 6. 2 a maximum continuous body diode f orward current (note 6 ) i s 2 a pulsed drain current ( 38 0 dm 50 a thermal characteristics characteristic symbol value unit total power dissipation (note 5 ) p d 0.7 w thermal resistance, junction to ambient (note 5 ) s teady state r ? ja 1 70 c/w total power dissipation (note 6 ) p d 1. 8 w thermal resistance, junction to ambient (note 6 ) s teady state r ? ja 7 0 c/w operating and storage temperature range t j, t stg - 55 to +150 c electrical characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 8 ) drain - source breakdown voltage bv dss 30 gs = 0v, i d = 250a j = + 25c i dss a ds = 24 v, v gs = 0v gate - source leakage i gss gs = 20 v, v ds = 0v on characteristics (note 8 ) gate threshold voltage v gs( th ) 1.0 ds = v gs , i d = 250 a ds (on) ? gs = 10 v, i d = 9.0 a v gs = 4.5 v, i d = 7.0 a diode forward voltage v sd gs = 0 v, i s = 2 a dynamic characteristics (note 9 ) input capacitance c iss ds = 15 v, v gs = 0v , f = 1.0mhz output capacitance c oss rss g ? ds = 0 v, v gs = 0v , f = 1mhz total gate charge ( v gs = 10 v ) q g d d = 15 v, i d = 9 a total gate charge ( v gs = 4.5 v ) q g gs gd d( on ) dd = 15 v, v gs = 10 v, r g = 6 ? d = 9 a turn - on rise time t r d( off ) f rr f = 9 a , d i /d t = 100a/ rr notes: 5 . device mounted on fr - 4 substrate pc board, 2oz copper, with minimum recommended pad layout. 6 . device mounted on fr - 4 substrate pc board, 2oz copper, with 1 - inch square copper plate. 7 . i a s and e a s rating s are based on low frequency and duty cycles to keep t j = + 25 c . 8 . short duration pulse test used to minimize self - heating effect. 9 . guaranteed by design. not subject to product testing.
dm t3020lfdb document number: ds 38407 rev. 2 - 2 3 of 7 www.diodes.com may 2016 ? diodes incorporated dm t3020 l fdb 0.0 5.0 10.0 15.0 20.0 25.0 30.0 0 1 2 3 4 5 i d , drain current (a) v ds , drain - source voltage (v) figure 1. typical output characteristic v gs = 2.2v v gs = 2.5v v gs = 3.0v v gs = 10.0v v gs = 6.0v v gs = 4.0v v gs = 4.5v 0.01 0.012 0.014 0.016 0.018 0.02 0.022 0.024 0.026 0.028 0 5 10 15 20 25 30 r ds(on) , drain - source on - resistance ( d , drain - source current (a) figure 3. typical on - resistance vs. drain current and gate voltage v gs = 4.5v v gs = 10v 0 0.02 0.04 0.06 0.08 0.1 0 4 8 12 16 20 r ds(on) , drain - source on - resistance ( gs , gate - source voltage (v) figure 4. typical transfer characteristic i d = 9.0a i d = 7.0a 0.008 0.01 0.012 0.014 0.016 0.018 0.02 0.022 0.024 0 5 10 15 20 25 30 r ds(on) , drain - source on - resistance ( d , drain current (a) figure 5. typical on - resistance vs. drain current and junction temperature - 55 gs = 10v 0.6 0.8 1 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 r ds(on) , drain - source on - resistance (normalized) t j , junction temperature ( gs = 4.5v, i d = 7.0a v gs = 10v, i d = 9.0a 0 3 6 9 12 15 1 1.5 2 2.5 3 i d , drain current (a) v gs , gate - source voltage (v) figure 2. typical transfer characteristic v ds = 5v - 55
dm t3020lfdb document number: ds 38407 rev. 2 - 2 4 of 7 www.diodes.com may 2016 ? diodes incorporated dm t3020 l fdb 0 0.01 0.02 0.03 0.04 -50 -25 0 25 50 75 100 125 150 r ds(on) , drain - source on - resistance ( j , junction temperature ( gs = 4.5v, i d = 7.0a v gs = 10v, i d = 9.0a 0 5 10 15 20 25 30 0 0.3 0.6 0.9 1.2 1.5 i s , source current (a) v sd , source - drain voltage (v) figure 9. diode forward voltage vs. current t j = 125 o c t j = 85 o c t j = 25 o c t j = - 55 o c v gs = 0v t j = 150 o c 10 100 1000 0 5 10 15 20 25 30 c t , junction capacitance (pf) v ds , drain - source voltage (v) figure 10. typical junction capacitance f=1mhz c rss c oss c iss 0 2 4 6 8 10 0 2 4 6 8 v gs (v) q g (nc) figure 11. gate charge v ds = 15v, i d = 9a 0.2 0.5 0.8 1.1 1.4 1.7 2 -50 -25 0 25 50 75 100 125 150 v gs(th) , gate threshold voltage (v) t j , junction temperature ( d = 250 d = 1ma 0.01 0.1 1 10 100 0.1 1 10 100 i d , drain current (a) v ds , drain - source voltage (v) f igure 12. soa, safe operation area p w =10s p w =10ms p w =100 s dc r ds(on) limited p w =1ms p w =100ms t j(max) = 150 c = 25 gs = 10v p w =1s
dm t3020lfdb document number: ds 38407 rev. 2 - 2 5 of 7 www.diodes.com may 2016 ? diodes incorporated dm t3020 l fdb 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 r(t), transient thermal resistance t1, pulse duration time (sec) figure 13. transient thermal resistance d=single pulse d=0.005 d=0.01 d=0.02 d=0.05 d=0.1 d=0.3 d=0.5 d=0.9 d=0.7 r ja (t) = r(t) * r ja r ja = 169
dm t3020lfdb document number: ds 38407 rev. 2 - 2 6 of 7 www.diodes.com may 2016 ? diodes incorporated dm t3020 l fdb package outline dimensions please see http://www.diodes.com/package - outlines.html for the latest version. u - dfn2020 - 6 (type b) u - dfn2020 - 6 type b dim min max typ a 0.545 0.605 0.575 a1 0.00 0.05 0.02 a3 - - 0.13 b 0.20 0.30 0.25 d 1.95 2.075 2.00 d2 0.50 0.70 0.60 e - - 0.65 e 1.95 2.075 2.00 e2 0.90 1.10 1.00 k - - 0.45 l 0.25 0.35 0.30 z - - 0.225 z1 - - 0.175 all dimensions in mm suggested pad layout please see http://www.diodes.com/package - outlines.html for the latest version. u - dfn2020 - 6 (type b) dimensions value (in mm) c 0.650 g 0.150 g1 0.450 x 0.350 x1 0.600 x2 1.650 y 0.500 y1 1.000 y2 2.300 d2 r0.150 a a1 a3 seating plane e d2 e2 b (pin #1 id) e l d k z1 z1 z x2 c y2 y1(2x) g1 x y g x1(2x)
dm t3020lfdb document number: ds 38407 rev. 2 - 2 7 of 7 www.diodes.com may 2016 ? diodes incorporated dm t3020 l fdb important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of t his document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthor ized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application , customers shall indemnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product name s and markings noted herein may also be covered by one or more united states, international or forei gn trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical components in life support devices or systems witho ut the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices o r systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect it s safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 2016 , diodes incorporated www.diodes.com
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